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| Transistors DTC124TH / DTC124TE / DTC124TUA / DTC124TKA / DTC124TSA Digital transistors (built-in resistor) DTC124TH / DTC124TE / DTC124TUA / DTC124TKA / DTC124TSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. !External dimensions (Units : mm) DTC124TH 0.27 1.6 0.85 (1) 0.5 0.5 (3) (2) 1.0 1.6 0.12 0to0.1 0.7 ROHM : EMT3 Flat lead EIAJ : SC-89 Abbreviated symbol : 05 (1) Emitter (2) Base (3) Collector (1) (2) 0.2 0.5 0.5 0.2 0.55 1.6 0.7 DTC124TE 0.3 (3) !Equivalent circuit 0.15 0.1Min. 0.8 1.6 0~0.1 1.0 ROHM : EMT3 EIAJ : SC-75A C B R1 E Abbreviated symbol : 05 (1)Emitter (2)Base (3)Collector DTC124TUA (1) 0.65 0.65 0.7 B : Base C : Collector E : Emitter 0.15 0.3 (3) 1.25 2.1 0.2 (2) 1.3 0.9 Each lead has same dimensions 0.1~0.4 0~0.1 2.0 ROHM : UMT3 EIAJ : SC-70 Abbreviated symbol : 05 (1)Emitter (2)Base (3)Collector DTC124TKA (1) 0.4 (3) 1.6 2.8 0.15 0.3~0.6 0~0.1 0.8 1.1 0.95 0.95 1.9 2.9 (2) Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : 05 (1)Emitter (2)Base (3)Collector DTC124TSA 3 4 2 (15Min.) 3Min. 0.45 Taping specifications 2.5 5 (1)(2)(3) 0.5 0.45 ROHM : SPT EIAJ : SC-72 (1)Emitter (2)Collector (3)Base Transistors !Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg 150 DTC124TH / DTC124TE / DTC124TUA / DTC124TKA / DTC124TSA Limits(DTC124T ) H E UA 50 50 5 100 200 150 -55 ~ +150 300 KA SA Unit V V V mA mW C C !Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency Transition frequency of the device Symbol Min. BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT 50 50 5 - - - 100 15.4 - Typ. - - - - - - 250 22 250 Max. - - - 0.5 0.5 0.3 600 28.6 - Unit V V V A A V - k MHZ IC=50A IC=1mA IE=50A VCB=50V VEB=4V Conditions IC/IB=5mA/0.5mA VCE=5V,IC=1mA - VCE=10V,IE=-5mA,f=100MHZ !Packaging specifications Package Packaging type Code Part No. Basic ordering unit (pieces) DTC124TH DTC124TE DTC124TUA DTC124TKA DTC124TSA - - - - - - - - - - EMT3H Taping T2L 8000 EMT3 Taping TL 3000 - UMT3 Taping T106 3000 - - SMT3 Taping T146 3000 - - - SST3 Taping TP 5000 - - - - Transistors !Electrical characteristic curves 1k 500 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) DTC124TH / DTC124TE / DTC124TUA / DTC124TKA / DTC124TSA 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=100C 25C -40C lC/lB=10 VCE=5V 200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=100C 25C -40C COLLECTOR CURRENT : IC(A) COLLECTOR CURRENT : IC(A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage vs. collector current |
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